Analog multiplying-averaging circuit and wattmeter circuit using the circuit

ABSTRACT

In an analog multiplying-averaging circuit for detecting very small mean power in a wide band and a wattmeter using the circuit, a first voltage signal is inputted to a base and a second voltage signal is inputted to a collector of one transistor circuit of a first differential amplifier, to supply a power corresponding to the multiplying-averaging of the two input signals to the collector of the transistor circuit. A base and a collector of another transistor circuit of the first amplifier are grounded to extract a DC collector voltage corresponding to junction temperature differences produced between the two transistor circuits from the collector of the other transistor circuit. A second amplifier is provided, which also has two transistor circuits. A base of one transistor circuit of the second differential amplifier is grounded. The second voltage signal is inputted to a collector of the one transistor circuit, and a base and a collector of another transistor circuit of the second amplifier are grounded to also extract a DC collector voltage corresponding to junction temperature differences of the two transistor circuits from the collector of the other transistor circuit of the second amplifier. From the two DC collector voltages, a signal corresponding to the multiplying-averaging of two input signals is obtained.

This is a continuation of application Ser. No. 07/980,785, filed as PCT/JP90/0114, Aug. 31, 1990, now abandoned.

TECHNICAL FIELD

This invention relates to an analog multiplying-averaging circuit and a wattmeter circuit using the circuit and, more particularly, to an analog multiplying-averaging circuit capable of detecting very small mean power in a wide band and a wattmeter circuit using said circuit therein.

BACKGROUND ART

An action for multiplying two input signals v(t), i(t) is essential in order to measure AC mean power, by way of example. In the prior art, an electrodynamometer type of wattmeter has been used for that purpose. But this type of wattmeter comprises a fixed coil and a movable coil and carries out mechanical action for multiplication, and in addition an error is generated due to reactance inside the wattmeter and the error changes according to a power factor of a load or a frequency, so that a compact wattmeter for a broad band is hardly available.

Also there is a wattmeter circuit which uses so-called an analog multiplier IC and outputs an instantaneous voltage e(t) corresponding to v(t)×i(t), but the circuit is extremely complicated and expensive, and furthermore the following calculation must be carried out separately outside: ##EQU1## if it is necessary to know mean power P=|V||I| cos θ.

Conventional power measurement has been carried out as described above, and a compact and simply constructed circuit capable of detecting very small mean power in a broad band, has not been available.

DISCLOSURE OF INVENTION

Accordingly, an object of the present invention is to provide a compact and simply constructed analog multiplying-averaging circuit capable of highly precise detection in a broad band, in which multiplying-averaging of two input signals is achieved, as well as a wattmeter circuit which employs this circuit.

According to the present invention, the foregoing object is attained by providing an analog multiplying-averaging circuit characterized in that a first voltage signal is inputted to a base and a second voltage signal is inputted to a collector of one transistor circuit of a differential amplifier, a base and a collector of another transistor circuit are signally grounded.

According to the present invention, the foregoing object is attained by providing a wattmeter circuit characterized by comprising: an analog multiplying-averaging circuit in which a first voltage signal is inputted to a base and a second voltage signal is inputted to a collector of one transistor circuit of a differential amplifier, a base and a collector of another transistor circuit are signally grounded; an offset-voltage generating circuit in which a base of one transistor circuit of a differential amplifier is signally grounded, said second voltage signal is inputted to a collector of this transistor circuit, a base and a collector of another transistor circuit are signally grounded; and an output takeoff circuit for extracting a signal proportional to a difference between collector voltages of the other transistor circuits of said analog multiplying-averaging circuit and offset-voltage generating circuit.

And, in the analog multiplying-averaging circuit of the present invention, the first voltage signal is inputted to the base and the second voltage signal is inputted to the collector of one transistor circuit of the differential amplifier, thereby to supply to the collector a power corresponding to the multiplying-averaging of the two input signals. The base and collector of another transistor circuit are signally grounded, thereby to produce a junction temperature difference between the one transistor circuit and the other transistor circuit. As a result, a DC collector voltage corresponding to the junction temperature difference is obtained from the collector of the other transistor circuit.

Further, in the wattmeter circuit according to the present invention, the analog multiplying-averaging circuit is such that average power in the form {|V||I|cos θ+f(|V|)} is supplied to the collector of one transistor circuit of the circuit and a DC collector voltage corresponding to a junction temperature difference developed between this transistor circuit and another transistor circuit is extracted from collector of the other transistor circuit. The offset-voltage generating circuit is such that average power in the form {f|V|} is supplied to the collector of one transistor circuit and a DC collector voltage corresponding to a junction temperature difference developed between this transistor circuit and another transistor circuit is extracted from the collector of the other transistor circuit. The output takeoff circuit amplifies the difference between two DC collector voltages that have been extracted, and delivers a DC voltage signal proportional to the difference {|V| |I| cos θ} between the two supplied power signals.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a circuit diagram showing a wattmeter circuit embodying the present invention;

FIG. 2 is a circuit diagram illustrating a differential-mode signal equivalent circuit of a collector multiplying circuit 3;

FIG. 3 is a circuit diagram illustrating a differential-mode signal equivalent circuit of an offset-voltage generating circuit 4;

FIG. 4 is a circuit diagram illustrating a thermal equivalent circuit of transistors T₁ and T₂ ;

FIG. 5 is a circuit diagram illustrating a common-mode signal thermal equivalent circuit in transistors T₁ and T₂ ;

FIG. 6 is a circuit diagram illustrating a differential-mode signal thermal equivalent circuit in transistors T₁ and T₂ ;

FIG. 7 is a circuit diagram illustrating a DC operation of a wattmeter circuit;

FIG. 8 is a plot of an output DC voltage vs an input AC voltage for input AC currents;

FIG. 9 is a plot of an output DC voltage vs an input AC current for input AC voltages;

FIG. 10 is a plot of an output DC voltage vs phase difference θ between |V| and |I|;

FIG. 11 is a graph showing a relationship between the position of the junction of transistors T₁, T₂ and the temperature at this junction; and

FIGS. 12 and 13 are diagrams for describing the derivation of the differential-mode signal equivalent circuit shown in FIG. 2.

BEST MODE FOR CARRYING OUT THE INVENTION

An embodiment in which the present invention is applied to a bipolar transistor will now be described in detail with reference to the accompanying drawings.

FIG. 1 is a circuit diagram showing a wattmeter circuit embodying the present invention. In FIG. 1, a current i(t) is the current of an electric power to be measured, or a current proportional to this current, and a voltage v(t) likewise is the voltage of the electric power to be measured, or a voltage proportional to this voltage. The wattmeter includes a current/voltage converting circuit (CVC) 1 that converts the input current i(t) into a voltage source {-R_(r) i(t)}, a voltage follower (VF) 2 for outputting the voltage source v(t) that is the same as the input voltage v(t), a collector multiplying circuit (analog multiplying-averaging circuit) 3 so constructed that a signal at the voltage source {-R_(f) i(t)} enters a base bl of a transistor T₁, a signal at the voltage source v(t) enters a collector cl of this transistor and a base b2 and collector c2' of a transistor T₂ are signally grounded, an offset-voltage generating circuit 4 so constructed that a base b4 of a transistor T₄ is signally grounded, the signal at the voltage source v(t) enters a collector c4 of this transistor and a base b5 and a collector c5 of a transistor T₅ are signally grounded, and an output takeoff circuit 5 which extracts a DC voltage signal V_(P) proportional to the difference between DC collector voltages V_(c2), V_(c5) of the transistors T₂, T₅ in the collector multiplying circuit 5 and offset-voltage generating circuit 4, respectively.

It is preferred that these transistor circuits T₁ through T₆ be incorporated in the same IC chip made of silicon, for example, so that they will exhibit identical characteristics both electrically and thermally.

FIG. 2 is a circuit diagram illustrating a differential-mode signal equivalent circuit of a collector multiplying circuit 5, and FIGS. 12 and 13 are diagrams for describing the derivation of FIG. 2. The derivation of the differential-mode signal equivalent circuit of FIG. 2 will now be described.

First, C_(c) in FIG. 1 represents a coupling capacitor, and C_(b) denotes a bypass capacitor. These capacitors can be regarded as being short-circuited with respect to the signal. Accordingly, the signal voltages {-R_(f) i(t)} and v(t) are applied respectively to the base bl and collector cl of the transistor T₁, and the base b2 and collector c2 of the transistor T₂ are signally at ground potential.

The equivalent circuit of FIG. 12 is obtained if we let h parameters represent the foregoing and let α=1, h_(rb) =0 hold. In FIG. 12, R_(e) represents a high resistance exhibited by the emitter circuit of the transistor T₃. Since {-R_(f) i(t)} in FIG. 12 is the voltage source, an identical voltage source {-R_(f) i(t)} may be considered to be present in the block enclosed by the broken line of FIG. 12. Accordingly this circuit may be separated from the remaining circuitry at the potion indicated by the "x" mark in FIG. 12.

Accordingly, the equivalent circuit of FIG. 15 is obtained by cutting off the portion enclosed by the dot-dash-line of FIG. 12 and rewriting it. When the magnitudes of the voltage source {-R_(f) i(t)} and a voltage source {αi_(e1) /h_(ob) } are compared, it is found that the following relation holds since i_(e1) =-R_(f) i(t)/2h_(ib) holds true from the inequality h_(ib) <<R_(e) in FIG. 12. ##EQU2## where i(t)≠0.

Since h_(ob) h_(ib) is actually very small, e.g., on the order of 10⁻⁴, the end result is that the voltage source {-R_(r) i(t)} of FIG. 15 is very small in comparison with the voltage source {αi_(e1) /h_(ob) } and therefore is negligible.

Accordingly, the equivalent circuit representing the portion of collector c1 of transistor T₁ in FIG. 2 is obtained by rewriting the above circuit neglecting the voltage source {-R_(f) i(t)} of FIG. 15.

It should be noted that, since {-R_(f) i(t)}=0 holds when i(t)=0 holds, the equivalent circuit representing the portion of collector c1 of the transistor T₁ in FIG. 2 is obtained as a matter of course.

Furthermore, input voltages v_(b1), V_(b2) to the respective base terminals b1, b2 may generally be represented by the sum of a common-mode signal and differential-mode signal as follows: ##EQU3## However, since it may be considered that the common-mode signal is not amplified because of the high resistance R_(e), the following equations may be assumed to hold by taking into account only the differential-mode signal: ##EQU4##

Furthermore, since the high resistance R_(e) of FIG. 12 may be considered to represent a short circuit with regard to the differential-mode signal, the differential-mode signal equivalent circuit of FIG. 2 is obtained.

Next, the collector multiplying effect in the transistor T₁ will be described based upon the differential-mode signal equivalent circuit in FIG. 2. In FIG. 2, a signal current i_(d) =-R_(f) i(t)/2h_(ib) flows into the emitter e₁ of the transistor T₁ owing to the fact that v_(b1) =-R_(f) i(t)/2 holds. In addition, since α=1 holds, an identical current i_(d) is drawn from the collector c1 of the transistor T₁. On the other hand, the signal voltage v(t) is being impressed upon the collector c1 of the transistor T₁, and therefore instantaneous power p_(c1) (t) supplied to the collector c1 of transistor T₁ is expressed as follows: ##EQU5## Thus, the multiplying effect of the collector in the transistor T₁ is indicated by the first term on the right side of Equation (1). Since the second term on the right side of this equation is superfluous, an identical power loss is generated in the offset-voltage generating circuit 4, described below, so as to cancel the second term. On the other hand, since the signal voltage v(t) is not being impressed upon the collector c2 of transistor T₂, instantaneous power p_(c2) (t) supplied to the collector c2 of transistor T₂ is equal to zero.

If we let v(t)=V_(m) cos.sub.ω t and i(t)=I_(m) cos(.sub.ω t+θ) represent each of the input signals, we have: ##EQU6## Arranging this in the form of a trigonometric equation, we have: ##EQU7## Since the terms on the first line of the right side of Equation (3) represent a DC component, these terms apply average power to the collector of transistor T₁. However, since the terms on the second line represent a 2₁₀₇ component, these do not apply average power to the collector of transistor T₁.

FIG. 5 is a circuit diagram showing a differential-mode signal equivalent circuit of the offset-voltage generating circuit 4. According to FIG. 1, since the base inputs to the transistors T₄ and T₅ are both at ground potential, the differential input is equal zero in FIG. 5 and therefore the potion relating to the signal current i_(d) also is zero. On the other hand, the signal voltage v(t) is being applied to the collector c4 of transistor T₄, and therefore instantaneous power p_(c4) (t) supplied to the collector c4 of transistor T₄ is expressed as follows:

    p.sub.c4 (t)=h.sub.ob v.sup.2 (t)                          (4)

Further, since the signal voltage v(t) is not being applied to the collector c5 of transistor T₅, instantaneous power p_(c5) (t) supplied to the collector c5 of transistor T₅ is equal to zero.

Furthermore, if the input signal is expressed by v(t)=V_(m) cos.sub.ω t and rearranging is performed in a manner similar to that described above, we have: ##EQU8## Since the first term on the right side of Equation (5) is a DC component, this term applies average power to the collector of transistor T₄. However, since the second term is a 2.sub.ω component, this does not apply average power to the collector of transistor T₄.

Thus, in accordance with Equation (3), signal (average) power ΔP_(c1), expressed by the following equation, is supplied to the collector cl of transistor T₁ : ##EQU9## In accordance with Equation (5), signal (average) power ΔP_(c4), expressed by the following equation, is supplied to the collector c4 of the transistor T₄ : ##EQU10## In addition, the temperature at the junction of transistors T₁ and T₂ varies owing to the signal power ΔP_(c1), a heat flow occurs due to a difference in the power losses between the transistors T₁ and T₂, and a DC collector voltage V_(c2) corresponding to this change in junction temperature appears at the collector c2 of transistor T₂. Similarly, the temperature at the junction of transistors T₄ and T₅ varies owing to the signal power ΔP_(c4), a heat flow occurs due to a difference in the power losses between the transistors T₄ and T₅, and a DC collector voltage V_(c5) corresponding to this change in junction temperature appears at the collector c5 of transistor T₅. Accordingly, true average power corresponding to the difference between ΔP_(c1) and ΔP_(c4) can be determined by detecting the difference between V_(c2) and V_(c5). This process will be described below.

FIG. 4 is a circuit diagram showing a thermal equivalent circuit of the transistors T₁ and T₂. Shown in FIG. 4 are signal powers ΔP_(c1), ΔP_(c2), amounts of change ΔT_(j1), ΔT_(j2) in junction temperature due to signal power, a thermal resistance θ_(m) between junctions, and thermal resistance θ_(ja) between the junctions and ambient air. Since ΔP_(c2) =0 holds in accordance with the foregoing, the common-mode signal component of the signal power may be represented by ΔP_(c1) /2 and differential-mode signal component by ±ΔP_(c1) /2. As a result, the thermal equivalent circuit of FIG. 4 can be considered upon being separated into a common-mode signal thermal equivalent circuit shown in FIG. 5 and a differential-mode signal thermal equivalent circuit shown in FIG. 6.

If the common-mode signal thermal equivalent circuit of FIG. 5 is solved, the amount of change ΔT_(ja) in the junction temperature will be as follows: ##EQU11##

If the differential-mode signal equivalent circuit of FIG. 6 is solved, the amount of change ΔT_(jd) /2 in the junction temperature will be as follows: ##EQU12##

Accordingly, by substituting Equation (6) in ΔP_(c1) of Equation (9) and rearranging, the junction temperature difference ΔT_(jd) between the junctions of transistors T₁ and T₂ may be expressed as follows: ##EQU13##

FIG. 11 is a graph showing the relationship between the position of the junction of transistors T₁, T₂ and the temperature at this junction. In FIG. 11, T_(a) represents ambient temperature and T_(jo) represents the junction temperature in the absence of a signal. These are related by the following equation:

    T.sub.jo =T.sub.a +θ.sub.ja P.sub.c

where P_(c) represents collector loss in the absence of a signal. Since the change in junction temperature due to the signal power is added to this, the junction temperatures T_(j1),T_(j2) of the transistors T₁, T₂ may be expressed by following equations: ##EQU14##

Thus, when the junction temperatures of the transistors T₁, T₂ change, the base-to-emitter voltages of the transistors T₁, T₂ change. The process for obtaining the DC collector voltage V_(c2) corresponding to this change will be described below.

FIG.7 is a circuit diagram illustrating the DC operation of the wattmeter circuit according to this embodiment. Signals indicated in FIG. 7 include direct currents I_(E), I_(B), I_(c), an emitter voltage V_(E) and a base-emitter voltage V_(BE).

In the collector multiplying circuit 5 of FIG. 7, the collector potential V_(c2) of transistor T₂ is given by the following:

    V.sub.c2 =V.sub.cc -R.sub.c I.sub.c2 -R.sub.c ΔI.sub.c2 (13)

Here ΔI_(c2) represents the amount of change in the collector current of the transistor T₂ due to a change in junction temperature and is obtained as set forth below.

In general, since the base-emitter voltage of a transistor is a function of junction temperature, emitter current and base-collector voltage, we have the following relations:

    V.sub.BE1 =f.sub.1 (T.sub.j1,I.sub.E1,V.sub.CB1)

    V.sub.BE2 =f.sub.2 (T.sub.j2,I.sub.E2,V.sub.CB2)

The amounts of change in these voltages may be expressed as follows in approximate terms: ##EQU15##

Accordingly, owing to the fact that the characteristics of the transistors T₁ and T₂ are identical, and by assuming that the following holds: ##EQU16## the following relation is obtained from Equation (14):

    ΔV.sub.BE2 =κ(ΔT.sub.j1 -ΔT.sub.j2)+h.sub.ib (ΔI.sub.E1 -ΔI.sub.E2)                        (16)

This describes the temperature characteristics of the transistors T₁ and T₂.

In the collector multiplying circuit S shown in FIG. 7, the following relations hold: ##EQU17## and the following relation is obtained from Equation (17):

    V.sub.BE1 -V.sub.BE2 =-R.sub.b (I.sub.B1 -I.sub.B2)        (18)

With regard to the amounts of change in these voltages, the following relation is obtained:

    ΔV.sub.BE1 -ΔV.sub.BE2 =-R.sub.b (ΔI.sub.B1 -ΔI.sub.B2)                                         (19)

When this is substituted in Equation (16), the following relation is obtained:

    -R.sub.b (ΔI.sub.B1 -ΔI.sub.B2)=κ(ΔT.sub.j1 -ΔT.sub.j2)+h.sub.ib (ΔI.sub.E1 -ΔI.sub.E2) (20)

This describes the temperature dependence of the collector multiplying circuit 3.

Furthermore, the following relations hold with regard to the transistors T₁ and T₂ :

    ΔI.sub.B1 =ΔI.sub.c1 /h.sub.FE

    ΔI.sub.B2 =ΔI.sub.c2 /h.sub.FE

and it was assumed that α=1 holds. In addition, if I_(CBO) =0, h_(ob) =0 are assumed to hold, then ΔI_(c1) =ΔI_(E1), ΔI_(C2) =ΔI_(E2) can be regarded as holding. Therefore, when relations above are applied to Equation (20) and this equation is solved with regard to (ΔI_(C1) -ΔI_(C2)), the following is obtained: ##EQU18##

Furthermore, since ΔT_(j1) -ΔT_(j2) =ΔT_(jd) holds and ΔI_(C1) =-Δ I_(c2) is established owing to the sufficiently stable current operation of the transistor T₃, the amount of change ΔI_(c2) in the collector current of the transistor T₂ may be expressed as follows: ##EQU19##

By expressing the power to be measured, namely the average power, as follows: ##EQU20## and substituting Equation (10) in ΔT_(jd) of Equation (22), the following equation is obtained: ##EQU21##

On the other hand, in the offset-voltage generating circuit 4 of FIG. 7, the collector potential V_(c5) of transistor T₅ is given by the following:

    V.sub.c5 =V.sub.cc -R.sub.c I.sub.c5 -R.sub.c ΔI.sub.c5 (25)

and the signal power supplied to the transistor T₄ is as expressed by Equation (7). Therefore, ΔI_(C5) may be expressed as follows in a manner similar to that set forth above: ##EQU22##

The output takeoff circuit 5 differentially amplifies V_(c2) and V_(c5) and the output voltage V_(P) thereof is given by the following: ##EQU23## Also, since these transistors T₁ through T₆ are chosen to have identical characteristics, we have I_(c2) =I_(c5). Accordingly, we have: ##EQU24## Now, substituting Equations (24), (26) in Equation (28), we may write V_(P) as follows: ##EQU25## Furthermore, if sensitivity S is defined as follows: ##EQU26## then the output DC voltage V_(P) may be expressed by the following equation: ##EQU27## Thus it is clear that the output DC voltage V_(P) is proportional to the power P to be measured.

FIG. 8 is a graph in which output DC voltage is plotted against input AC voltage, and FIG. 9 is a graph in which output DC voltage is plotted against input AC current. In FIGS. 8 and 9, |V|, |I| are effective values. In both of these figures, the input/output characteristics may be regard as being substantially linear for an input AC voltage |V| of not more than 5V and an input AC current |I| of not more than 15 μA. When the sensitivity S is found from the slope of straight line, the results shown in Tables 1 and 2 are obtained.

                  TABLE 1                                                          ______________________________________                                         |I| [μA]                                                                S [mV/μW]                                                     ______________________________________                                         20            0.136                                                            15            0.140                                                            10            0.139                                                             5            0.142                                                            Mean of S     0.139                                                            ______________________________________                                    

                  TABLE 2                                                          ______________________________________                                         |V| [V]                                                                    S [mV/μW]                                                     ______________________________________                                         5             0.141                                                            4             0.140                                                            3             0.139                                                            2             0.138                                                            1             0.138                                                            Mean of S     0.139                                                            ______________________________________                                    

Table 1 and 2 indicate that the values of sensitivity S are substantially agree in all cases and that the actually measured value of sensitivity S is 0.139 mV/μW.

FIG. 10 is a graph in which the output DC voltage is plotted against the phase difference between |V| and |I|. The phase difference between |V| and |I| also can be expressed in the form V_(P) =100 cos θ[mV], and the output DC voltage V_(P) is proportional to cos θ. Accordingly, the wattmeter circuit can be utilized to measure phase difference as well as power factor.

In the embodiment described above, the collector multiplying circuit 5 and the offset-voltage generating circuit 4 operate under identical conditions, and therefore a substantial offset effect is observed even in the non-linear range of the transistor characteristics.

Further, in the foregoing embodiment, the current/voltage converting circuit (CVC) 1 is employed to detect the signal i(t). This means that the input impedance may be regarded as 0 (not more than 0.1 Ω), so that even a very small load current is capable of being detected in accurate fashion.

In the foregoing embodiment, the voltage follower (VF) 2 is employed to detect the signal v(t). Since the input impedance of the voltage follower is very large, e,g., on the order of 10⁹ Ω, voltage can be detected accurately without the load being influenced.

Though i(t), v(t) are employed as the input signals in the foregoing embodiment, the present invention can be applied even in the case of other types of signals provided the signal is converted to a voltage source.

Further, though a case in which an NPN transistor is used is described in the foregoing embodiment, it is obvious that a PNP transistor may be used as well.

In accordance with the present invention, as described above, the arrangement is such that a first voltage signal is inputted to the base of one transistor circuit of a differential amplifier circuit, a second voltage signal is inputted to the collector thereof and the base and collector of another transistor circuit of the differential amplifier are signally grounded. As a result, an effect through which two inputs are multiplied is obtained at the collector of the one transistor circuit, and a DC voltage corresponding to the multiplying-averaging of the two inputs is extracted continuously from the collector of the other transistor circuit. Accordingly, it is possible to provide a compact and simply constructed analog multiplying-averaging circuit capable of highly precise detection over a wide band.

Further, in accordance with the invention, the analog multiplying-averaging circuit is such that average power in the form [|V||I| cos θ+f(|V|)} is supplied to the collector of one transistor circuit of the circuit and a DC collector voltage corresponding to a junction temperature difference developed between this transistor circuit and another transistor circuit is extracted from collector of the other transistor circuit. The offset-voltage generating circuit is such that average power in the form {f|V|} is supplied to the collector of one transistor circuit and a DC collector voltage corresponding to a junction temperature difference developed between this transistor circuit and another transistor circuit is extracted from the collector of the other transistor circuit. The output takeoff circuit amplifies the difference between two DC collector voltages that have been extracted, and delivers a DC voltage signal proportional to the difference {|V| |I| cos θ} between the two supplied power signals. As a result, a compact, precise wattmeter capable of highly precise detection over a wide band can be provided at low cost.

As many apparently widely different embodiments of the present invention may be made without departing from the spirit and scope thereof, it is to be understood that the invention is not limited to the specific embodiments thereof except as defined in the appended claims. 

We claim:
 1. A two-input product averaging circuit comprising:a differential amplifier including a first transistor circuit having a collector, an emitter and a base, and a second transistor circuit having a collector, an emitter and a base, a first voltage signal being inputted to the base of the first transistor circuit and a second voltage signal being inputted to the collector of said first transistor circuit, the base and the collector of said second transistor circuit being grounded with respect to input signals, so that a first signal power proportional to an average value of the product of the first and second voltage signals together is supplied across the collector and the emitter of said first transistor circuit and a second signal power of zero is supplied across the collector and the emitter of said second transistor circuit, and thereby a temperature difference proportional to a difference between said first and second signal powers is produced across each junction of said first and second transistor circuits and direct currents generated by said temperature difference flow into the respective collectors of said first and second transistor circuits, wherein a DC collector voltage based upon said direct currents and corresponding to the average value of the product of the first and second voltage signals is extracted from said differential amplifier.
 2. A two-input product averaging circuit comprising:a collector multiplying circuit including a first differential amplifier which includes a first transistor circuit having a collector, an emitter and a base, and a second transistor circuit having a collector, an emitter and a base, a first voltage signal being inputted to the base of the first transistor circuit and a second voltage signal being inputted to the collector of said first transistor circuit, the base and the collector of said second transistor circuit being grounded with respect to input signals so that a first signal power proportional to an average value of a product of the first and second voltage signals together is supplied across the collector and the emitter of said first transistor circuit and a second signal power of zero is supplied across the collector and the emitter of said second transistor circuit, and thereby a first temperature difference proportional to a difference between said first and second signal powers is produced across each junction of said first and second transistor circuits and direct currents generated by said first temperature difference flow into the respective collectors of said first and second transistor circuits, wherein a first DC collector voltage based upon said direct currents and corresponding to the average value of the product of the first and second voltage signals is extracted from the collector of said second transistor circuit; an offset-voltage generating circuit including a second differential amplifier which includes a third transistor circuit having a collector, an emitter and a base, and a fourth transistor circuit having a collector, an emitter and a base, said second voltage signal being inputted to the collector of said third transistor circuit, the base of said third transistor circuit being grounded with respect to input signals, and the base and the collector of said fourth transistor circuit being grounded with respect to input signals so that a third signal power proportional to an average value of the square of the second voltage signal is supplied across the collector and the emitter of said third transistor circuit and a fourth signal power of zero is supplied across the collector and the emitter of said fourth transistor circuit, and thereby a second temperature difference proportional to a difference between said third and fourth signal powers is produced across each junction of said third and fourth transistor circuits and direct currents generated by said second temperature difference flow into the respective collectors of said third and fourth transistor circuits, wherein a second DC collector voltage based upon said direct currents and corresponding to the average value of the square of the second voltage signal is extracted from the collector of said fourth transistor circuit; and an output takeoff circuit coupled to said collector of said second transistor circuit and said collector of said fourth transistor circuit for extracting a DC voltage signal proportional to a difference between the first and second DC collector voltages.
 3. A two-input product averaging circuit comprising:a collector multiplying circuit including a first differential amplifier including a first transistor circuit having a collector, an emitter and a base, and a second transistor circuit having a collector, an emitter and a base, a first voltage signal being inputted to the base of the first transistor circuit and a second voltage signal being inputted to the collector of said first transistor circuit, the base and the collector of said second transistor circuit being grounded so that a first DC collector voltage caused by a junction temperature difference produced between said first and second transistor circuits is generated at the collector of said second transistor circuit; an offset voltage generating circuit including a second differential amplifier including a third transistor circuit having a collector, an emitter and a base, and a fourth transistor circuit having a collector, an emitter and a base, said second voltage signal being inputted to the collector of said third transistor circuit, the base of said third transistor circuit being grounded with respect to input signals, and the base and the collector of the fourth transistor circuit being grounded with respect to input signals so that a second DC collector voltage caused by a junction temperature difference produced between said third and fourth transistor circuits is generated at the collector of said fourth transistor circuit; and an output takeoff circuit coupled to said collector of said second transistor circuit and said collector of said fourth transistor circuit, respectively, to receive therefrom said first DC collector voltage and said second DC collector voltage and producing a DC voltage signal proportional to a difference between said first DC collector voltage and said second DC collector voltage. 